IGaN’s 200mm GaN-on-Si epi to Optimize Cost in Power Switching

Singapore, 14 May 2019 – With commercialization in mid-2019, IGaN’s solutions in high-quality gallium nitride on 200mm silicon substrates aims to drive mainstream adoption of GaN to advance next-generation high-speed, high-power devices and high-efficiency power devices. Designed in collaboration with its tool vendor, IGaN’s solutions have achieved even better uniformity and demonstrated higher breakdown voltages. “IGaN will be mass-production-ready with our fab partner in second-quarter 2019,” says the company’s President, George Wong. “We are looking for customers now to take first-mover advantage of our one-stop semiconductor hub solution for 200mm GaN epiwafer and GaN fab process.”

Read more about this technology and capabilities in the full article on Semiconductortoday.com