- We have GaN IPs to protect our customers to carry out GaN epi wafer and fab processes.
- We offer standard and flexible GaN stack layer design through either custom design or co-design.
- Our engineering and operations’ team has 25 years hands on experience running world-class foundry.
- We are one among a few worldwide to have GaN IPs to protect our rights and our customers, and to carry out GaN epi wafer and fab processes.
- We possess highly flexible epi wafer capabilities, either custom design or co-design.
- We offer a full silicon foundry with a very experienced engineering and operations team.
IGSS GaN (IGaN) provides a one-stop solution for gallium nitride on silicon (GaN-on-Si) wafer fabrication for both power and radio frequency (RF) devices. We manufacture GaN-on-Si epitaxial wafers and offer proprietary wafer fabrication services on CMOS compatible Fab.
We have exclusive Gallium Nitride on Silicon (GaN-on-Si) Disruptive Technologies licenses from Singapore premier Research Institutions.
Together with our GaN fabrication process technologies, we can deliver superior, customizable GaN-on-Si solutions for customers.
Leverage on our GaN capabilities today to leapfrog and differentiate.
Find out more about our products here.