Singapore and Kulim, Malaysia, 5 December 2018 – IGSS GaN (IGaN), a Singapore-based specialist in GaN-on-silicon technology, and SilTerra Malaysia Sdn. Bhd., a home-grown Malaysian semiconductor wafer foundry, are pleased to announce the impressive results of their recent technology transfer partnership, successfully demonstrating a breakdown voltage of 650V for a D-Mode MISHEMT device using 200mm…

Dear IGaN Valued Customers, We are proud to announce that we have just moved to a new office location on 1st June, 2018 to accommodate our growth. Our new office address is: No 5, International Business Park, #02-07A Mewah Building Singapore 609914. Our office/fax number will remain the same as +65-6515-0170. Our new and larger…

In our previous article titled “Why should we use Gan-On-Si?” we looked into the various benefits of Gan-on-Si technology and some of the improvements it provides over conventional silicon MOSFETs. In summary, Gan-on-Si semiconductors have: Lower On Resistance Faster Less Capacitance Smaller Form Factor Along with these improvements comes possible applications into everyday products to…

The research collaboration explores innovative solutions for GaN-on-silicon wafer fabrication process Singapore – IGSS GaN Pte Ltd (IGaN) is tapping on researchers from Nanyang Technological University Singapore’s School of Electrical and Electronic Engineering (NTU EEE) to co-develop the gallium nitride on silicon device (GaN-on-Si) processing on 200mm wafers. This joint collaboration started in 2014 when…

GaN devices, also known as Gallium Nitride devices have made its name as being a high performance alternative to silicon-based devices. So why are more manufacturers moving into GaN technology? Current Silicon-based devices has been for years the go-to standard for power switches in power applications such as: AC/DC supplies Motor Controls DC/DC Supplies And…