GaN-on Silicon Epi Wafer
IGaN has proprietary GaN-on-Si epitaxy process overcoming common challenges such as wafer breakage, wafer bowing, 3D defects, and doping.
We supply 100mm, 150mm and 200mm diameter GaN-on-Si epiwafer with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon (111) substrate for power & RF applications.
We also provide a standard stack of AlGaN transition layers and GaN buffer.
The standard structure is shown below. Custom-design stack layers are also available upon request.
Request for technical datasheet.