GaN-on-Si Epi Wafers

GaN-on Silicon Epi Wafer

IGaN has proprietary GaN-on-Si epitaxy process overcoming common challenges such as wafer breakage, wafer bowing, 3D defects, and doping.

We supply 150mm and 200mm diameter GaN-on-Si epiwafer with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon (111) substrate for power & RF applications.

We also provide a standard stack of AlGaN transition layers and GaN buffer.

The standard structure is shown below. Custom-design stack layers are also available upon request.

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  • Excellent crystal quality
  • Uniform layer thickness and composition
  • High wafer to wafer consistency
  • Low leakage current
  • Superior 2DEG characteristic
  • Power HEMT
  • RF HEMT