GaN-on Silicon Epi Wafer
IGaN has proprietary GaN-on-Si epitaxy process overcoming common challenges such as wafer breakage, wafer bowing, 3D defects, and doping.
We supply 150mm and 200mm diameter GaN-on-Si epiwafer with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon (111) substrate for power & RF applications.
We also provide a standard stack of AlGaN transition layers and GaN buffer.
The standard structure is shown below. Custom-design stack layers are also available upon request.
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- Excellent crystal quality
- Uniform layer thickness and composition
- High wafer to wafer consistency
- Low leakage current
- Superior 2DEG characteristic
- Power HEMT
- RF HEMT