Singapore, 14 May 2019 – With commercialization in mid-2019, IGaN’s solutions in high-quality gallium nitride on 200mm silicon substrates aims to drive mainstream adoption of GaN to advance next-generation high-speed, high-power devices and high-efficiency power devices. Designed in collaboration with its tool vendor, IGaN’s solutions have achieved even better uniformity and demonstrated higher breakdown voltages. “IGaN…

Singapore and Kulim, Malaysia, 5 December 2018 – IGSS GaN (IGaN), a Singapore-based specialist in GaN-on-silicon technology, and SilTerra Malaysia Sdn. Bhd., a home-grown Malaysian semiconductor wafer foundry, are pleased to announce the impressive results of their recent technology transfer partnership, successfully demonstrating a breakdown voltage of 650V for a D-Mode MISHEMT device using 200mm…

Dear IGaN Valued Customers, We are proud to announce that we have just moved to a new office location on 1st June, 2018 to accommodate our growth. Our new office address is: No 5, International Business Park, #02-07A Mewah Building Singapore 609914. Our office/fax number will remain the same as +65-6515-0170. Our new and larger…

The research collaboration explores innovative solutions for GaN-on-silicon wafer fabrication process Singapore – IGSS GaN Pte Ltd (IGaN) is tapping on researchers from Nanyang Technological University Singapore’s School of Electrical and Electronic Engineering (NTU EEE) to co-develop the gallium nitride on silicon device (GaN-on-Si) processing on 200mm wafers. This joint collaboration started in 2014 when…