Singapore and Kulim, Malaysia, 5 December 2018 – IGSS GaN (IGaN), a Singapore-based specialist in GaN-on-silicon technology, and SilTerra Malaysia Sdn. Bhd., a home-grown Malaysian semiconductor wafer foundry, are pleased to announce the impressive results of their recent technology transfer partnership, successfully demonstrating a breakdown voltage of 650V for a D-Mode MISHEMT device using 200mm GaN-on-Si wafer on CMOS compatible fabrication process. The outcome of this exclusive collaboration results in the transfer and establishment of a gold-free metallization and CMOS compatible 200mm GaN-on-Si Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT) fabrication process in SilTerra.
“IGaN aims to offer an innovative one-stop solution, providing 100mm to 200mm GaN-on-Si epiwafer and 200mm CMOS friendly GaN fabrication processes. This will enable customers in the power semiconductor community currently offering silicon-based power metal–oxide–semiconductor field-effect transistor (MOSFET) and IGBTs to leapfrog into GaN technology devices, unlocking access to the huge opportunity of the US$12 billion power device market using GaN technology,” said Raj Kumar, Chairman & CEO of IGaN.
“We are already engaged in positive discussions with other customers enthusiastic about the potential of our platform, keen to accelerate their access into the rapidly growing GaN market, as our new partnership with SilTerra enables mass production of this powerful new technology in early 2019,” he added.
“We are excited about this achievement to demonstrate D-MISHEMT using a 200mm GaN-on-Si wafer on foundry CMOS process. With our close partnership with IGaN, SilTerra is committed to deliver the best yielding process and capacity assurance to fulfil our mutual customers’ business expectations,” said Firdaus Abdullah, CEO of SilTerra.
GaN devices are used for high power density, wireless power transfer, allowing for higher server power, a capability recently demonstrated with great success at the APEC 2018 conference and exhibition in San Antonio, Texas. Using GaN technology, a density on-board charger (OBC) for electric vehicles delivered a three-fold increase in power density at 4kW per litre, compared to a silicon-based charger at 1.3 kW per litre. Further demonstrations revealed that GaN transistors can enable wireless charging to be increased from 100W to 1.5kW.
This innovative technology unlocks the potential for exciting wireless charging applications far beyond low power applications such as cell phones and laptops. GaN also enables greater energy savings and increased power density in data centres, which significantly reduces OPEX, CAPEX and TCO expenses, with a fifty percent power density increase achievable utilizing the same size power supply.
IGaN and SilTerra are together offering an accelerator to spur the conversion of pure silicon and compound-based technologies into GaN-on-Si. This will favourably impact the bottom line and long-term business competitiveness of both power and RF semiconductor companies who adopt this technology. The powerful efficiency performance figures of GaN-on-Si show its further potential as a green-enabling technology, delivering a positive global environmental impact by minimizing power conversion losses.
For more information on our pioneering semiconductor and fabrication processes and partnerships, please contact us at email@example.com
About IGSS GaN Pte Ltd
IGSS GaN (IGaN) provides a one-stop solution for gallium nitride on silicon (GaN-on-Si) wafer fabrication for both power and radio frequency (RF) devices. We manufacture GaN-on-Si epitaxial wafers and offer proprietary wafer fabrication services on CMOS compatible Fab.
The company was founded in Singapore by industry pioneers and veterans with multiple GaN-on-Si technology partners. Apart from its own IPs/know-how, IGaN has exclusivity of A-STAR’s GaN-on-Si IPs.
IGSS GaN Pte Ltd Contact
SilTerra Malaysia Sdn Bhd is a semiconductor wafer foundry offering fabrication and design support services in CMOS logic, High-Voltage, Mixed-signal, RF, BCD, Power and MEMS technologies down to 90 nanometer feature size. SilTerra’s wafer fab has a design-in capacity of 46,000 eight-inch wafers per month and currently serves customers in US, Taiwan, Korea and China. Environmentally vigilant, SilTerra delivers award-winning, world-class performance to its customers seeking flexible capacity, custom technologies and around the clock customer support. SilTerra is ISO 9001:2015 and ISO 14001 certified. Starting commercial production in 2001, the company’s headquarters and factory are located in Malaysia’s Kulim Hi-Tech Park, with sales and marketing offices in San Jose (California) and Hsinchu (Taiwan). Visit www.silterra.com
SilTerra Malaysia Sdn Bhd Contact
Matthew Tan Hooi Sin
Koh Meng Kong